Philips Logic level TOPFET PIP3119-P Specification Sheet
Philips Semiconductors Product specification Logic level TOPFET PIP3119-P DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source voltage 50 V assembled in a 3 pin plastic I D Continuous drain current 20 A package. P D Total power dissipation 90 W T j Continuous junction temperature 150 ÃÂC APPLICATIONS R DS(ON) Drain-source on-state resistance 28 m ⦠General purpose switch for driving I ISL Input supply current V IS = 5 V 650 õA lamps motors solenoids heaters FEATURES FUNCTIONAL BLOCK DIAGRAM TrenchMOS output stage Current limiting Overload protection Overtemperature protection Protection latched reset by input 5 V logic compatible input level Control of output stage and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro-controller ESD protection on all pins Overvoltage clamping for turn off of inductive loads Fig.1. Elements of the TOPFET. PINNING - SOT78B PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 input 2 drain 3 source tab drain DRAIN SOURCE INPUT RIG LOGIC AND PROTECTION O / V CLAMP POWER MOSFET 12 3 MBL292 Front view mb mb P D S I TOPFET May 2001 1 Rev 1.000
Philips Semiconductors Product specification Logic level TOPFET PIP3119-P LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Continuous drain source voltage 1 -5 0 V I D Continuous drain current V IS = 5 V; T mb = 25 ÃÂC - self - A limited I D Continuous drain current V IS = 5 V; T mb ⤠121 ÃÂC - 20 A I I Continuous input current -5 5 mA I IRM Repetitive peak input current ô ⤠0.1, tp = 300 õs -50 50 mA P D Total power dissipation T mb ⤠25 ÃÂC - 90 W T stg Storage temperature -55 175 ÃÂC T j Continuous junction temperature 2 normal operation - 150 ÃÂC T sold Lead temperature during soldering - 260 ÃÂC ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 k ⦠OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Inductive load turn-off I DM = 20 A; V DD ⤠20 V E DSM Non-repetitive clamping energy T mb ⤠25 ÃÂC - 350 mJ E DRM Repetitive clamping energy T mb ⤠95 ÃÂC; f = 250 Hz - 45 mJ OVERLOAD PROTECTION LIMITING VALUE With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload - overtemperature and short circuit load. SYMBOL PARAMETER REQUIRED CONDITION MIN. MAX. UNIT V DS Drain source voltage 3 4 V ⤠V IS ⤠5.5 V 0 35 V THERMAL CHARACTERISTIC SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance R th j-mb Junction to mounting base - - 1.25 1.39 K/W 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher T j is allowed as an overload condition but at the threshold T j(TO) the over temperature trip operates to protect the switch. 3 All control logic and protection functions are disabled during conduction of the source drain diode. May 2001 2 Rev 1.000
Philips Semiconductors Product specification Logic level TOPFET PIP3119-P OUTPUT CHARACTERISTICS Limits are for -40 ÃÂC ⤠T mb ⤠150 ÃÂC; typicals are for T mb = 25 ÃÂC unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Off-state V IS = 0 V V (CL)DSS Drain-source clamping voltage I D = 10 mA 50 - - V I DM = 4 A; t p ⤠300 õs; ô ⤠0.01 50 60 70 V I DSS Drain source leakage current V DS = 40 V - - 100 õA T mb = 25 ÃÂC - 0.1 10 õA On-state V IS âÂÂ¥ 4.4 V; t p ⤠300 õs; ô ⤠0.01 R DS(ON) Drain-source resistance I DM = 10 A - - 52 m ⦠T mb = 25 ÃÂC - 22 28 m ⦠OVERLOAD CHARACTERISTICS V IS = 5 V; T mb = 25 ÃÂC unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Short circuit load I D Drain current limiting V DS = 13 V 28.5 43 57 A 4.4 V ⤠V IS ⤠5.5 V; 21 - 65 A -40 ÃÂC ⤠T mb ⤠150 ÃÂC Overload protection P D(TO) Overload power threshold device trips if P D > P D(TO) 75 185 250 W T DSC Characteristic time which determines trip time 1 200 380 600 õs Overtemperature protection T j(TO) Threshold junction 150 170 - ÃÂC temperature 2 1 Trip time t d sc varies with overload dissipation P D according to the formula t d sc â T DSC / ln[ P D / P D(TO) ]. 2 This is independent of the dV/dt of input voltage V IS . May 2001 3 Rev 1.000
Philips Semiconductors Product specification Logic level TOPFET PIP3119-P INPUT CHARACTERISTICS The supply for the logic and overload protection is taken from the input. Limits are for -40 ÃÂC ⤠T mb ⤠150 ÃÂC; typicals are for T mb = 25 ÃÂC unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V IS(TO) Input threshold voltage V DS = 5 V; I D = 1 mA 0.6 - 2.4 V T mb = 25 ÃÂC 1.1 1.6 2.1 V I IS Input supply current normal operation; V IS = 5 V 100 220 400 õA V IS = 4 V 80 195 330 õA I ISL Input supply current protection latched; V IS = 5 V 200 400 650 õA V IS = 3 V 130 250 430 õA V ISR Protection reset voltage 1 reset time t r âÂÂ¥ 100 õs 1.5 2 2.9 V t lr Latch reset time V IS1 = 5 V, V IS2 < 1 V 10 40 100 õs V (CL)IS Input clamping voltage I I = 1.5 mA 5.5 - 8.5 V R IG Input series resistance 2 T mb = 25 àC- 3 3 - k ⦠to gate of power MOSFET SWITCHING CHARACTERISTICS T mb = 25 ÃÂC; V DD = 13 V; resistive load R L = 4 â¦. Refer to waveform figure and test circuit. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT t d on Turn-on delay time V IS = 5 V - 25 50 õs t r Rise time - 50 100 õs t d off Turn-off delay time V IS = 0 V - 60 120 õs t f Fall time - 50 100 õs 1 The input voltage below which the overload protection circuits will be reset. 2 Not directly measureable from device terminals. May 2001 4 Rev 1.000
Philips Semiconductors Product specification Logic level TOPFET PIP3119-P MECHANICAL DATA Fig.2. SOT78B (TO220AB) package 1 , pin 2 connected to mounting base. REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT78B D D 1 q L 123 L 1 b 1 e e b (1) 0 5 10 mm scale Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads SOT78B DIMENSIONS (mm are the original dimensions) A E A 1 c Notes 1. The positional accuracy of the terminals is controlled within zone L 1 max. 2. Mounting base configuration is not defined within the dimensions E and D Q L 2 UNIT A 1 b 1 D 1 e â p mm 2.54 qQ A b (1) D c L 2 max. 3.0 3.8 3.6 4.3 4.1 15.0 13.5 3.30 2.79 3.0 2.7 2.6 2.2 w 0.4 0.7 0.4 15.8 15.2 0.85 0.60 1.3 1.0 4.5 4.1 1.39 1.27 6.4 5.9 10.3 9.7 L 1 p 1 E L 01-02-22 mounting base (2) w M â p p 1 1 Refer to mounting instructions for SOT78 (TO220) envelopes. Epoxy meets UL94 V0 at 1/8". Net mass: 2 g May 2001 5 Rev 1.000
Philips Semiconductors Product specification Logic level TOPFET PIP3119-P DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS 1 STATUS 2 Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. ï Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. May 2001 6 Rev 1.000
Philips Semiconductors Product specification Logic level TOPFET PIP3119-P LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Continuous drain source voltage 1 -5 0 V I D Continuous drain current V IS = 5 V; T mb = 25 ÃÂC - self - A limited I D Continuous drain current V IS = 5 V; T mb ⤠121 ÃÂC - 20 A I I Continuous input current -5 5 mA I IRM Repetitive peak input current ô ⤠0.1, tp = 300 õs -50 50 mA P D Total power dissipation T mb ⤠25 ÃÂC - 90 W T stg Storage temperature -55 175 ÃÂC T j Continuous junction temperature 2 normal operation - 150 ÃÂC T sold Lead temperature during soldering - 260 ÃÂC ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 k ⦠OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Inductive load turn-off I DM = 20 A; V DD ⤠20 V E DSM Non-repetitive clamping energy T mb ⤠25 ÃÂC - 350 mJ E DRM Repetitive clamping energy T mb ⤠95 ÃÂC; f = 250 Hz - 45 mJ OVERLOAD PROTECTION LIMITING VALUE With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload - overtemperature and short circuit load. SYMBOL PARAMETER REQUIRED CONDITION MIN. MAX. UNIT V DS Drain source voltage 3 4 V ⤠V IS ⤠5.5 V 0 35 V THERMAL CHARACTERISTIC SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance R th j-mb Junction to mounting base - - 1.25 1.39 K/W 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher T j is allowed as an overload condition but at the threshold T j(TO) the over temperature trip operates to protect the switch. 3 All control logic and protection functions are disabled during conduction of the source drain diode. May 2001 2 Rev 1.000
Philips Semiconductors Product specification Logic level TOPFET PIP3119-P OUTPUT CHARACTERISTICS Limits are for -40 ÃÂC ⤠T mb ⤠150 ÃÂC; typicals are for T mb = 25 ÃÂC unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Off-state V IS = 0 V V (CL)DSS Drain-source clamping voltage I D = 10 mA 50 - - V I DM = 4 A; t p ⤠300 õs; ô ⤠0.01 50 60 70 V I DSS Drain source leakage current V DS = 40 V - - 100 õA T mb = 25 ÃÂC - 0.1 10 õA On-state V IS âÂÂ¥ 4.4 V; t p ⤠300 õs; ô ⤠0.01 R DS(ON) Drain-source resistance I DM = 10 A - - 52 m ⦠T mb = 25 ÃÂC - 22 28 m ⦠OVERLOAD CHARACTERISTICS V IS = 5 V; T mb = 25 ÃÂC unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Short circuit load I D Drain current limiting V DS = 13 V 28.5 43 57 A 4.4 V ⤠V IS ⤠5.5 V; 21 - 65 A -40 ÃÂC ⤠T mb ⤠150 ÃÂC Overload protection P D(TO) Overload power threshold device trips if P D > P D(TO) 75 185 250 W T DSC Characteristic time which determines trip time 1 200 380 600 õs Overtemperature protection T j(TO) Threshold junction 150 170 - ÃÂC temperature 2 1 Trip time t d sc varies with overload dissipation P D according to the formula t d sc â T DSC / ln[ P D / P D(TO) ]. 2 This is independent of the dV/dt of input voltage V IS . May 2001 3 Rev 1.000
Philips Semiconductors Product specification Logic level TOPFET PIP3119-P INPUT CHARACTERISTICS The supply for the logic and overload protection is taken from the input. Limits are for -40 ÃÂC ⤠T mb ⤠150 ÃÂC; typicals are for T mb = 25 ÃÂC unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V IS(TO) Input threshold voltage V DS = 5 V; I D = 1 mA 0.6 - 2.4 V T mb = 25 ÃÂC 1.1 1.6 2.1 V I IS Input supply current normal operation; V IS = 5 V 100 220 400 õA V IS = 4 V 80 195 330 õA I ISL Input supply current protection latched; V IS = 5 V 200 400 650 õA V IS = 3 V 130 250 430 õA V ISR Protection reset voltage 1 reset time t r âÂÂ¥ 100 õs 1.5 2 2.9 V t lr Latch reset time V IS1 = 5 V, V IS2 < 1 V 10 40 100 õs V (CL)IS Input clamping voltage I I = 1.5 mA 5.5 - 8.5 V R IG Input series resistance 2 T mb = 25 àC- 3 3 - k ⦠to gate of power MOSFET SWITCHING CHARACTERISTICS T mb = 25 ÃÂC; V DD = 13 V; resistive load R L = 4 â¦. Refer to waveform figure and test circuit. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT t d on Turn-on delay time V IS = 5 V - 25 50 õs t r Rise time - 50 100 õs t d off Turn-off delay time V IS = 0 V - 60 120 õs t f Fall time - 50 100 õs 1 The input voltage below which the overload protection circuits will be reset. 2 Not directly measureable from device terminals. May 2001 4 Rev 1.000
Philips Semiconductors Product specification Logic level TOPFET PIP3119-P MECHANICAL DATA Fig.2. SOT78B (TO220AB) package 1 , pin 2 connected to mounting base. REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT78B D D 1 q L 123 L 1 b 1 e e b (1) 0 5 10 mm scale Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads SOT78B DIMENSIONS (mm are the original dimensions) A E A 1 c Notes 1. The positional accuracy of the terminals is controlled within zone L 1 max. 2. Mounting base configuration is not defined within the dimensions E and D Q L 2 UNIT A 1 b 1 D 1 e â p mm 2.54 qQ A b (1) D c L 2 max. 3.0 3.8 3.6 4.3 4.1 15.0 13.5 3.30 2.79 3.0 2.7 2.6 2.2 w 0.4 0.7 0.4 15.8 15.2 0.85 0.60 1.3 1.0 4.5 4.1 1.39 1.27 6.4 5.9 10.3 9.7 L 1 p 1 E L 01-02-22 mounting base (2) w M â p p 1 1 Refer to mounting instructions for SOT78 (TO220) envelopes. Epoxy meets UL94 V0 at 1/8". Net mass: 2 g May 2001 5 Rev 1.000
Philips Semiconductors Product specification Logic level TOPFET PIP3119-P DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS 1 STATUS 2 Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. ï Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. May 2001 6 Rev 1.000