Philips TDA8566 Product Data Sheet

1. General description The TD A8566 is an integrated class-B output amplifier which is a v ailable in se ver al packages . TD A8566TH is contained in a 20-lead small outline plastic package . The TD A8566TH1 is a 24-lead small outline plastic package which is pin compatib le with the I 2 C-bus controlled amplifier TD A1566TH f or one board la yout. TD A8566Q is a 17-pin DIL-bent-SIL package . The de vice contains 2 amplifiers in a Bridge-Tied Load (BTL) configuration. The output pow er is 2 × 25 W in a 4 Ω load or 2 × 40 W in a 2 Ω load. It has a differential input stage and 2 diagnostic outputs. The de vice is pr imarily dev eloped f or car radio applications. 2. Features n Diff erential inputs n V er y high Common Mode Rejection Ratio (CMRR) n High common mode input signal handling n Requires v er y fe w external components n High output powe r n 4 Ω and 2 Ω load dr iving capability n Low offset v oltage at output n Fix ed gain n Diagnostic f acility (distor tion, shor t-circuit and temperature pre-warning) n Good ripple rejection n Mode select s witch (operating, mute and standb y) n Load dump protection n Shor t-circuit proof to ground, to V P and across the load n Low po wer dissipation in any shor t-circuit condition n Ther mally protected n Re verse polarity saf e n Protected against electrostatic discharge n No s witch-on/switch-off plops n Low thermal resistance n TD A8566TH1 is pin compatible with TD A1566TH TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier with differential inputs and dia gnostic outputs Rev . 06 — 15 October 2007 Product data sheet
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 2 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier 3. Quic k reference data [1] The circuit is DC adjusted at V P = 6 V to 18 V and AC oper ating at V P = 8.5 V to 18 V . [2] V ripple =V ripple(max) = 2 V (p-p); R s =0 Ω . [3] Common mode rejection ratio measured at the output (ov er R L ) with both inputs tied together; V common ≤ 3.5 V (RMS); f i = 100 Hz to 10 kHz; R s =0 Ω . [4] Noise measured in a bandwidth of 20 Hz to 20 kHz. 4. Or dering information T able 1. Quick ref erence data V P = 14.4 V ; T amb =2 5 ° C; f i = 1 kHz; measured in test circuit of Figure 9; unless otherwise specified. Symbol Parameter Conditions Min Ty p Max Unit V P supply voltage [1] 6 14.4 18 V I ORM repetitive peak output current - - 7.5 A I q quiescent current R L = ∞Ω - 115 180 mA I stb standby current - 0.1 10 µA Z i input impedance diff erential 100 120 150 k Ω P o output power R L =4 Ω ; THD = 10 % 21 25 - W R L =2 Ω ; THD = 10 % 33 40 - W SVRR supply voltage ripple rejection operating [2] 50 60 - dB α cs channel separation P o = 25 W; R s =1 0k Ω 45 50 - dB CMRR common mode rejection ratio R s =0 Ω [3] 60 75 - dB G v closed loop voltage gain 25 26 27 dB V n(o) noise output voltage operating; R s =0 Ω [4] - 85 120 µV T able 2. Ordering inf ormation T ype number Pack a g e Name Description V ersion TD A8566TH HSOP20 plastic, heatsink small outline pac kage; 20 leads; low stand-off height SO T418-3 TD A8566TH1 HSOP24 plastic, heatsink small outline pac kage; 24 leads; lo w stand-off height SO T566-3 TD A8566Q DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SO T243-1
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 3 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier 5. Bloc k diagram (1) Pin HEA TT AB is av ailable in TD A8566TH1 only . Fig 1. Block dia gram C M V A (9 ×) 2.3 k Ω 2.3 k Ω mute switch C M V A V A 1 × standby reference voltage standby switch mute reference voltage V ref mute switch CLIP (9 ×) 2.3 k Ω 2.3 k Ω 60 k Ω 60 k Ω 60 k Ω 60 k Ω mute switch C M V A (9 ×) 2.3 k Ω 2.3 k Ω mute switch C M V A TDA8566 V P2 V P1 PGND2 PGND1 OUT2 − OUT2 OUT1 − OUT1 IN1 − IN1 IN2 − IN2 SGND HEATTAB (1) n.c. DIAG MODE CLIP mgu358 (9 ×) 2.3 k Ω 2.3 k Ω mute switch DIAG
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 4 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier 6. Pinning inf ormation 6.1 Pinning Fig 2. Pin configuration TD A8566TH Fig 3. Pin configuration TD A8566TH1 Fig 4. Pin configuration TD A8566Q TD A8566TH MODE DIAG V P2 IN2 OUT2 − IN2 − PGND2 n.c. OUT2 n.c. OUT1 − n.c. PGND1 n.c. OUT1 IN1 V P1 IN1 − CLIP SGND 001aag902 20 19 18 17 16 15 14 13 12 11 9 10 7 8 5 6 3 4 1 2 TD A8566TH1 HEATTAB DIAG V P2 IN2 n.c. IN2 − OUT2 − n.c. PGND2 n.c. OUT2 n.c. OUT1 − MODE PGND1 n.c. OUT1 n.c. n.c. IN1 V P1 IN1 − CLIP SGND 001aah015 24 23 22 21 20 19 18 17 16 15 14 13 11 12 9 10 7 8 5 6 3 4 1 2 TD A8566Q IN1 IN1 − SGND CLIP V P1 OUT1 PGND1 OUT1 − n.c. OUT2 PGND2 OUT2 − V P2 MODE DIAG IN2 IN2 − 001aah059 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 5 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier 6.2 Pin description T able 3. Pin description TD A8566TH and TD A8566TH1 Symbol Pin Description TD A8566TH TD A8566TH1 DIA G 1 1 shor t-circuit and temperature pre-warning diagnostic output IN2 2 2 channel 2 input positive IN2 − 3 3 channel 2 input negativ e n.c. 4 4 not connected n.c. 5 5 not connected n.c. 6 6 not connected n.c. 7 - not connected n.c. - 8 not connected n.c. - 9 not connected IN1 8 10 channel 1 input positiv e IN1 − 9 11 channel 1 input negativ e SGND 10 12 signal ground CLIP 11 13 clip detection output V P1 12 14 supply voltage 1 n.c. - 15 not connected OUT1 13 16 channel 1 output positiv e PGND1 14 17 power ground 1 OUT1 − 15 18 channel 1 output negativ e n.c. - - not connected OUT2 16 19 channel 2 output positiv e PGND2 17 20 power ground 2 OUT2 − 18 21 channel 2 output negativ e n.c. - 22 not connected V P2 19 23 supply voltage 2 MODE 20 7 mode select switch input (standby/m ute/operating) HEA TT AB - 24 connect to ground, used for test purposes only T able 4. Pin description TD A8566Q Symbol Pin Description IN1 1 channel 1 input positive IN1 − 2 channel 1 input negativ e SGND 3 signal ground CLIP 4 clip detection output V P1 5 supply voltage 1 OUT1 6 channel 1 output positive PGND1 7 power g round 1 OUT1 − 8 channel 1 output negative n.c. 9 not connected
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 6 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier 7. Functional description The TD A8566 contains 2 identical amplifiers and can be used for BTL applications . The gain of each amplifier is fix ed at 26 dB. Special f eatures of this de vice are: • Mode select s witch • Clip detection • Shor t-circuit diagnostic • T emper ature pre-warning • Open-collector diagnostic outputs • Diff erential inputs 7.1 Mode select switc h (pin MODE) • Standby: lo w supply current • Mute: input signal suppressed • Operating: normal on condition Since this pin has a very low input current (< 40 µA), a low-cost supply s witch can be applied. T o av oid switch-on plops, it is advisable to keep the amplifier in the mute mode for a period of ≥ 150 ms (charging the input capacitors at pins IN1 , IN1 −, IN2 and IN2 −). This can be realized b y using a microcontroller or by using an e xternal timing circuit as illustrated in Figure 8. 7.2 Clip detection (pin CLIP) When clipping occurs at one or more output stages, the dynamic distor tion detector becomes activ e and pin CLIP goes LO W . This information can be used to dr ive a sound processor or a DC volume control to attenuate the input signal and so limit the le v el of distor tion. The output lev el of pin CLIP is independent of the number of channels that are being clipped. The clip detection circuit is disabled in a short-circuit condition, so if a fault condition occurs at the outputs, pin CLIP will remain at a HIGH le vel. The clip detection wa vef orms are illustrated in Figure 5. OUT2 10 channel 2 output positive PGND2 11 power ground 2 OUT2 − 12 channel 2 output negative V P2 13 supply voltage 2 MODE 14 mode select switch input (standby/m ute/operating) DIA G 15 shor t-circuit and temperature pre-w ar ning diagnostic output IN2 16 channel 2 input positiv e IN2 − 17 channel 2 input negativ e T able 4. Pin description TD A8566Q …continued Symbol Pin Description
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 7 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier 7.3 Short-circuit diagnostic (pin DIA G) When a shor t-circuit occurs at one or more outputs to ground or to the supply voltage, the output stages are switched off until the shor t-circuit is remov ed and the de vice is s witched on again (with a dela y of approximately 20 ms after the remov al of the shor t-circuit). During this shor t-circuit condition, pin DIAG is contin uously LOW . When a shor t-circuit occurs across the load of one or both channels, the output stages are s witched off for appro ximately 20 ms. After that time the load condition is chec ked during appro ximately 50 µs to see whether the shor t-circuit is still present. Due to this duty cycle of 50 µs/20 ms the av erage current consumption during the shor t-circuit condition is ver y low (appro ximately 40 mA). Dur ing this condition, pin DIAG is LO W f or 20 ms and HIGH f or 50 µs; see Figure 6. The power dissipation in an y shor t-circuit condition is ver y low . 7.4 T emperature pre-warning (pin DIA G) When the vir tual junction temperature (T vj ) reaches 145 °C, pin DIA G will become continuously LO W . 7.5 Open-collector diagnostic outputs Pins DIAG and CLIP are open-collector outputs, theref ore more devices can be tied together . Pins DIAG and CLIP can also be tied together . An e xter nal pull-up resistor is required. Fig 5. Clip detection wavef orms 0 V O (V) V CLIP (V) 0 t (s) mgu357 Fig 6. Short-circuit diagnostic timing diagram mgu360 short-circuit over the load 20 ms 50 µs t (s) t (s) V DIAG (V) current in output stage
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 8 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier 7.6 Differential inputs The input stage is a high-impedance fully diff erential balanced input stage that is also capable of operating in a single-ended mode with one of the inputs capacitiv ely coupled to an audio ground. It should be noted that if a source resistance is added (input v oltage dividers) the CMRR degrades to lo wer v alues. 8. Limiting v alues 9. Thermal characteristics T able 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol P arameter Conditions Min Max Unit V P supply voltage operating - 18 V non-operating - 30 V load dump protection; during 50 ms; t r ≥ 2.5 ms -4 5 V I OSM non-repetitive peak output current -1 0 A I ORM repetitive peak output current - 7.5 A T stg storage temperature −55 150 °C T vj vir tual junction temperature - 150 °C T amb ambient temperature −40 85 °C V psc shor t-circuit safe v oltage - 18 V V rp re verse polarity voltage - 6.0 V P tot total power dissipation - 60 W T able 6. Thermal characteristics Thermal character istics in accordance with IEC 60747-1. Symbol P arameter Conditions Ty p Unit R th(j-c) thermal resistance from junction to case see Figure 7 1.3 K/W R th(j-a) thermal resistance from junction to ambient in free air 40 K/W Fig 7. Equivalent thermal resistance netw ork 001aaa155 2.2 K / W 2.2 K / W 0.2 K / W case output 1 virtual junction output 2
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 9 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier 10. Static characteristics [1] The circuit is DC adjusted at V P = 6 V to 18 V and AC oper ating at V P = 8.5 V to 18 V . [2] At V P = 18 V to 30 V the DC output voltage is ≤ 0.5V P . T able 7. Static characteristics V P = 14.4 V ; T amb =2 5 ° C; measured in test circuit of Figure 9; unless otherwise specified. Symbol P arameter Conditions Min Ty p Max Unit Supply V P supply voltage [1] 6 14.4 18 V I q quiescent current R L = ∞Ω - 115 180 mA Operating condition V MODE mode select s witch le vel 8.5 - V P V I MODE mode select s witch current V MODE = 14.4 V - 15 40 µA V O output voltage [2] - 7.0 - V V OO output offset voltage - - 100 mV Mute condition V MODE mode select s witch le vel 3.3 - 6.4 V V O output voltage [2] - 7.0 - V V OO output offset voltage - - 60 mV ∆ V OO output offset voltage diff erence with respect to operating condition --6 0 m V Standby condition V MODE mode select s witch le vel 0- 2V I stb standby current - 0.1 10 µA Diagnostic V DIAG diagnostic output voltage during any f ault condition - - 0.6 V
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 10 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier 11. Dynamic characteristics T able 8. Dynamic characteristics V P = 14.4 V ; T amb =2 5 ° C; R L =2 Ω ; f i = 1 kHz; measured in test circuit of Figure 9; unless otherwise specified. Symbol P arameter Conditions Min Ty p Max Unit P o output power THD = 0.5 % 25 30 - W THD = 10 % 33 40 - W THD = 30 % 45 55 - W V P = 13.5 V; THD = 0.5 % - 25 - W V P = 13.5 V; THD = 10 % - 35 - W THD = 0.5 %; R L =4 Ω 16 19 - W THD = 10 %; R L =4 Ω 21 25 - W THD = 30 %; R L =4 Ω 28 35 - W V P = 13.5 V; THD = 0.5 %; R L =4 Ω -1 4 -W V P = 13.5 V; THD = 10 %; R L =4 Ω -2 2 -W THD total harmonic distor tion P o = 1 W - 0.1 - % V CLIP = 0.6 V [1] -8 -% P o = 1 W; R L =4 Ω - 0.05 - % B power bandwidth THD = 0.5 %; P o = − 1d B with respect to 25 W -2 0 t o 20 000 -H z f ro(l) low frequency roll off − 1d B [2] -2 5 -H z f ro(h) high frequency roll off − 1 dB 20 - - kHz G v closed loop v oltage gain 25 26 27 dB SVRR supply voltage ripple rejection operating [3] 50 60 - dB mute [3] 5 0 --d B standby [3] 8 0 --d B Z i input impedance diff erential 100 120 150 k Ω single-ended 50 60 75 k Ω |∆ Z i | input impedance mismatch -2 -% V n(o) noise output voltage operating; R s =0 Ω [4] - 85 120 µV operating; R s =1 0k Ω [4] - 100 - µV mute; independent of R s [4] -6 0 - µ V α cs channel separation P o = 25 W; R s =1 0k Ω 45 50 - dB |∆ G v | channel unbalance - - 1 dB
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 11 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier [1] Dynamic distor tion detector active; pin CLIP is LO W . [2] F requency response externally fixed. [3] V ripple =V ripple(max) = 2 V (p-p); R s =0 Ω . [4] Noise measured in a bandwidth of 20 Hz to 20 kHz. [5] Common mode rejection ratio measured at the output (ov er R L ) with both inputs tied together; V common ≤ 3.5 V (RMS); f i = 100 Hz to 10 kHz; R s =0 Ω . [6] Common mode rejection ratio measured at the output (ov er R L ) with both inputs tied together; V common ≤ 3.5 V (RMS); f i = 1 kHz; R s =4 5k Ω . The mismatch of the input coupling capacitors is excluded. 12. Application inf ormation 12.1 Diagnostic output Special care must be tak en in the PCB lay out to separate pin CLIP from pins IN1 , IN1 −, IN2 and IN2 − to minimize the crosstalk between the CLIP output and the inputs. 12.2 Mode select switc h T o a void s witch-on plops, it is advisab le to keep the amplifier in the m ute mode dur ing ≥ 150 ms (charging of the input capacitors at pins IN1 , IN1− , IN2 and IN2− ). The circuit in Figure 8 slowly ramps-up the v oltage at the mode select s witch pin when switching on and results in f ast muting when s witching off. V o(mute) output signal voltage in m ute V in =V in(max) = 1 V (RMS) - - 2 mV CMRR common mode rejection ratio R s =0 Ω [5] 60 75 - dB R s =4 5k Ω [6] 4 0 --d B T able 8. Dynamic characteristics …continued V P = 14.4 V ; T amb =2 5 ° C; R L =2 Ω ; f i = 1 kHz; measured in test circuit of Figure 9; unless otherwise specified. Symbol P arameter Conditions Min Ty p Max Unit Fig 8. Mode select switch cir cuit 100 k Ω mgd102 47 µF 10 k Ω S 100 Ω mode select switch V P
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 12 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier 13. T est inf ormation Fig 9. Stereo BTL test diagram R s /2 V MODE R s /2 R s /2 R s /2 V in2 V in1 10 k Ω 10 k Ω R L2 R L1 220 nF 220 nF 60 k Ω 60 k Ω − 220 nF 220 nF 60 k Ω 60 k Ω CLIP DETECTOR DIAGNOSTIC INTERFACE V P V P TDA8566 V ref 100 nF V P = 14.4 V 2200 µF (16V) CLIP DIAG mgu359 IN1 IN1 − OUT1 OUT1 − _ OUT2 OUT2 − _ IN2 SGND IN2 − PGND1 PGND2 MODE V P2 V P1
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 13 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier 14. P ac kage outline Fig 10. Pac kage outline SOT418-3 (HSOP20) UNIT A 4 (1) REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 0.08 − 0.04 3.5 0.35 DIMENSIONS (mm are the original dimensions) Notes 1. Limits per individual lead. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. SOT418-3 0 5 10 mm scale HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height SOT418-3 A max. detail X A 2 3.5 3.2 D 2 1.1 0.9 H E 14.5 13.9 L p 1.1 0.8 Q 1.7 1.5 2.5 2.0 v 0.25 w 0.25 yZ 8 ° 0 ° θ 0.07 x 0.03 D 1 13.0 12.6 E 1 6.2 5.8 E 2 2.9 2.5 b p c 0.32 0.23 e 1.27 D (2) 16.0 15.8 E (2) 11.1 10.9 0.53 0.40 A 3 A 4 A 2 (A 3 ) L p θ A Q D y x H E E c v M A X A b p w M Z D 1 D 2 E 2 E 1 e 20 11 1 10 pin 1 index 02-02-12 03-07-23
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 14 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier Fig 11. Pac kage outline SOT566-3 (HSOP24) UNIT A 4 (1) REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 03-02-18 03-07-23 IEC JEDEC JEITA mm 0.08 − 0.04 3.5 0.35 DIMENSIONS (mm are the original dimensions) Notes 1. Limits per individual lead. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. SOT566-3 0 5 10 mm scale HSOP24: plastic, heatsink small outline package; 24 leads; low stand-off height SOT566-3 A max. detail X A 2 3.5 3.2 D 2 1.1 0.9 H E 14.5 13.9 L p 1.1 0.8 Q 1.7 1.5 2.7 2.2 v 0.25 w 0.25 yZ 8 ° 0 ° θ 0.07 x 0.03 D 1 13.0 12.6 E 1 6.2 5.8 E 2 2.9 2.5 b p c 0.32 0.23 e 1 D (2) 16.0 15.8 E (2) 11.1 10.9 0.53 0.40 A 3 A 4 A 2 (A 3 ) L p θ A Q D y x H E E c v M A X A b p w M Z D 1 D 2 E 2 E 1 e 24 13 1 12 pin 1 index
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 15 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier Fig 12. Pac kage outline SOT243-1 (DBS17P) REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA DIMENSIONS (mm are the original dimensions) Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. SOT243-1 0 5 10 mm scale D L E A c A 2 L 3 Q w M b p 1 d D Z e e x h 11 7 j E h non-concave 99-12-17 03-03-12 DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 view B: mounting base side m 2 e v M B UNIT A e 1 A 2 b p cD (1) E (1) Z (1) de D h LL 3 m mm 17.0 15.5 4.6 4.4 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 2.54 v 0.8 12.2 11.8 1.27 e 2 5.08 2.4 1.6 E h 6 2.00 1.45 2.1 1.8 3.4 3.1 4.3 12.4 11.0 Q j 0.4 w 0.03 x
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 16 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier 15. Soldering This text provides a very brief insight into a complex technology . A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surf ace mount reflow soldering descr iption” . 15.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electr ical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single solder ing method that is ideal f or all IC packages. W av e soldering is often preferred when through-hole and Surf ace Mount Devices (SMDs) are mix ed on one printed wiring board; howe ver , it is not suitable f or fine pitch SMDs . Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 15.2 W a ve and reflow soldering W av e solder ing is a joining technology in which the joints are made by solder coming from a standing wa ve of liquid solder . The wav e soldering process is suitable f or the f ollowing: • Through-hole components • Leaded or leadless SMDs, which are glued to the surf ace of the printed circuit board Not all SMDs can be wa ve soldered. P ackages with solder balls, and some leadless packages which ha ve solder lands underneath the body , cannot be wav e soldered. Also , leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wa ve soldered, due to an increased probability of bridging. The reflow soldering process inv olv es applying solder paste to a board, follo wed by component placement and e xposure to a temperature profile. Leaded pac kages, packages with solder balls , and leadless packages are all reflo w solderable . K ey char acteristics in both wav e and reflow soldering are: • Board specifications , including the board finish, solder masks and vias • P ac kage footprints, including solder thie v es and orientation • The moisture sensitivity le vel of the pac kages • P ac kage placement • Inspection and repair • Lead-free soldering versus PbSn soldering 15.3 W a ve soldering K ey char acteristics in wav e soldering are: • Process issues , such as application of adhesive and flux, clinching of leads, board transpor t, the solder wa ve par ameters, and the time during which components are e xposed to the wa ve • Solder bath specifications , including temperature and impurities
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 17 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier 15.4 Reflow soldering K ey char acteristics in reflow soldering are: • Lead-free versus SnPb solder ing; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see Figure 13) than a PbSn process, thus reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window f or a mix of large and small components on one board • Reflo w temperature profile; this profile includes preheat, reflow (in which the board is heated to the peak temperature) and cooling down. It is imper ative that the peak temperature is high enough for the solder to mak e reliab le solder joints (a solder paste characteristic). In addition, the peak temperature must be lo w enough that the packages and/or boards are not damaged. The peak temper ature of the package depends on package thic kness and v olume and is classified in accordance with T ab le 9 and 10 Moisture sensitivity precautions, as indicated on the pac king, must be respected at all times. Studies hav e shown that small pac kages reach higher temperatures during reflow soldering, see Figure 13. T able 9. SnPb eutectic process (fr om J-STD-020C) P ackage thickness (mm) Pac kage reflow temperature ( °C) V olume (mm 3 ) < 350 ≥ 350 < 2.5 235 220 ≥ 2.5 220 220 T able 10. Lead-free pr ocess (from J-STD-020C) P ackage thickness (mm) Pac kage reflow temperature ( °C) V olume (mm 3 ) < 350 350 to 2 000 > 2 000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 18 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier F or fur ther information on temperature profiles, ref er to Application Note AN10365 “Surf ace mount reflow soldering description” . MSL: Moisture Sensitivity Lev el Fig 13. T emperature profiles f or large and small components 001aac844 temperature time minimum peak temperature = minimum soldering temperature maximum peak temperature = MSL limit, damage level peak temperature
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 19 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier 16. Revision history T able 11. Revision history Document ID Release date Data sheet status Change notice Supersedes TD A8566_6 20071015 Product data sheet - TD A8566Q_5 TD A8566TH_2 Modifications: • The f ormat of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal te xts hav e been adapted to the new compan y name where appropriate. • Section 9 “Thermal characteristics” : changed value of R th(j-c) to 1.3 K/W • Figure 7 : values updated • Included TD A8566TH1 and TD A8566Q in the data sheet TD A8566Q_5 20010221 Product specification - - TD A8566TH_2 20030708 Product specification - -
TDA8566_6 © NXP B.V . 2007. All rights reser ved. Product data sheet Rev . 06 — 15 October 2007 20 of 21 NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier 17. Legal inf ormation 17.1 Data sheet status [1] Please consult the most recently issued document before initiating or completing a design. [2] The ter m ‘shor t data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices . The latest product status information is av ailable on the Internet at URL http://www .nxp.com . 17.2 Definitions Draft — The document is a draft version only . The content is still under internal review and subject to f ormal approval, which ma y result in modifications or additions. NXP Semiconductors does not giv e any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A shor t data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full inf ormation see the relev ant full data sheet, which is av ailable on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prev ail. 17.3 Disclaimer s General — Information in this document is believed to be accur ate and reliable. Howe ver , NXP Semiconductors does not give any representations or warranties , expressed or implied, as to the accuracy or completeness of such information and shall hav e no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied pr ior to the publication hereof . Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitab le for use in medical, military , aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury , death or se vere property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’ s own risk. Applications — Applications that are descr ibed herein for an y of these products are for illustr ative purposes only . NXP Semiconductors mak es no representation or warranty that such applications will be suitab le for the specified use without fur ther testing or modification. Limiting values — Stress above one or more limiting v alues (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause per manent damage to the device. Limiting values are stress ratings only and operation of the device at these or an y other conditions above those giv en in the Characteristics sections of this document is not implied. Exposure to limiting values f or extended periods ma y affect de vice reliability . T erms and conditions of sale — NXP Semiconductors products are sold subject to the general ter ms and conditions of commercial sale, as published at http://www .nxp .com/profile/ter ms , including those per taining to warranty , intellectual proper ty rights infringement and limitation of liability , unless explicitly otherwise ag reed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between inf ormation in this document and such terms and conditions, the latter will prev ail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open f or acceptance or the grant, convey ance or implication of any license under any copyrights, patents or other industrial or intellectual proper ty rights. 17.4 T rademarks Notice: All referenced brands, product names, ser vice names and trademarks are the proper ty of their respective o wners. 18. Contact inf ormation F or additional information, please visit: http://www.nxp.com F or sales office addresses, send an email to: salesaddresses@nxp.com Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification f or product dev elopment. Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification. Product [shor t] data sheet Production This document contains the product specification.
NXP Semiconductors TD A8566 2 × 40 W/2 Ω stereo BTL car radio power amplifier © NXP B.V . 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 15 October 2007 Document identifier: TDA8566_6 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 19. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 4 Ordering inf ormation . . . . . . . . . . . . . . . . . . . . . 2 5 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Functional description . . . . . . . . . . . . . . . . . . . 6 7.1 Mode select s witch (pin MODE) . . . . . . . . . . . . 6 7.2 Clip detection (pin CLIP) . . . . . . . . . . . . . . . . . . 6 7.3 Shor t-circuit diagnostic (pin DIA G) . . . . . . . . . . 7 7.4 T emperature pre-warning (pin DIA G) . . . . . . . . 7 7.5 Open-collector diagnostic outputs . . . . . . . . . . 7 7.6 Diff erential inputs . . . . . . . . . . . . . . . . . . . . . . . 8 8 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Thermal characteristics. . . . . . . . . . . . . . . . . . . 8 10 Static characteristics . . . . . . . . . . . . . . . . . . . . . 9 11 Dynamic characteristics . . . . . . . . . . . . . . . . . 10 12 Application information. . . . . . . . . . . . . . . . . . 11 12.1 Diagnostic output . . . . . . . . . . . . . . . . . . . . . . 11 12.2 Mode select switch . . . . . . . . . . . . . . . . . . . . . 11 13 T est inf ormation . . . . . . . . . . . . . . . . . . . . . . . . 12 14 P ackage outline . . . . . . . . . . . . . . . . . . . . . . . . 13 15 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 15.1 Introduction to soldering . . . . . . . . . . . . . . . . . 16 15.2 W av e and reflow soldering . . . . . . . . . . . . . . . 16 15.3 W av e soldering . . . . . . . . . . . . . . . . . . . . . . . . 16 15.4 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 17 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 19 17 Legal information . . . . . . . . . . . . . . . . . . . . . . . 20 17.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20 17.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 17.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 17.4 T rademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 18 Contact information . . . . . . . . . . . . . . . . . . . . . 20 19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21