Philips TDA8571J Datasheet

DA T A SH EET Product specification Supersedes data of 1998 Mar 13 2002 Mar 05 INTEGRA TED CIRCUITS TDA8571J 4 × 40 W BTL quad car radio power amplifier
2002 Mar 05 2 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio power amplifier TD A8571J FEA TURES • Requires very few external components • High output power • Low output offset voltage • Fixed gain • Diagnostic facility (distortion, short-circuit and temperature pre-warning) • Good ripple rejection • Mode select switch (operating, mute and standby) • Load dump protection • Short-circuit safe to ground and to V P and across the load • Low power dissipation in any short-circuit condition • Thermally protected • Reverse polarity safe • Electrostatic discharge protection • No switch-on/switch-off plop • Flexible leads • Low thermal resistance • Pin compatible with the TDA8568Q, except for the gain. GENERAL DESCRIPTION The TDA8571J is a integrated class-B output amplifier contained in a 23-lead Single-In-Line (SIL) plastic power package. It contains four amplifiers in a BTL configuration, each with a gain of 34 dB. The output power is 4 × 40 W (EIAJ) into a 4 Ω load. APPLICA TIONS • Primarily developed for car radio applications. QUICK REFERENCE D A T A ORDERING INFORMA TION SYMBOL P ARAMETER CONDITIONS MIN. TYP . MAX. UNIT V P operating supply v oltage 6 14.4 18 V I ORM repetitive peak output current −−7.5 A I q(tot) total quiescent current − 200 − mA I stb standby current − 0.2 100 µA I sw s witch-on current −−80 µA  Z i  input impedance 25 30 − kΩ P o(EIAJ) EIAJ output power THD = maximum − 40 − W SVRR supply voltage ripple rejection R s =0 Ω− 50 − dB α cs channel separation R s =1 0k Ω− 50 − dB G v(cl) closed-loop voltage gain 33 34 35 dB V n(o) noise output voltage R s =0 Ω− − 170 µV  V OS  DC output offset voltage MUTE −− 80 mV ∆ V OS  delta DC output offset voltage ON ↔ MUTE −− 80 mV TYPE NUMBER P A CKA GE NAME DESCRIPTION VERSION TD A8571J DBS23P plastic DIL-bent-SIL pow er package; 23 leads (straight lead length 3.2 mm) SO T411-1
2002 Mar 05 3 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J BLOCK DIA GRAM Fig.1 Block diagram. handbook, full pagewidth MGM562 OUT1 OUT1 − − − V ref 2 IN1 IN2 4 23 16 8 1 15 10 MODE V P1 V P2 V P3 V P4 21 18 6 3 PGND1 PGND2 PGND3 PGND4 30 k Ω OUT2 OUT2 − − − 7 5 11 30 k Ω OUT3 OUT3 − − − V ref 17 IN3 SGND TDA8571J IN4 19 13 12 30 k Ω OUT4 OUT4 − − − 22 20 14 30 k Ω V DIAG DIAGNOSTIC 9
2002 Mar 05 4 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J PINNING SYMBOL PIN DESCRIPTION V P1 1 supply voltage 1 OUT1 2 output 1 PGND1 3 power g round 1 OUT1 − 4 output 1 − OUT2 − 5 output 2 − PGND2 6 power g round 2 OUT2 7 output 2 V P2 8 supply voltage 2 V DIAG 9 diagnostic output IN1 10 input 1 IN2 11 input 2 SGND 12 signal ground IN3 13 input 3 IN4 14 input 4 MODE 15 mode select s witch input V P3 16 supply voltage 3 OUT3 17 output 3 PGND3 18 power ground 3 OUT3 − 19 output 3 − OUT4 − 20 output 4 − PGND4 21 power ground 4 OUT4 22 output 4 V P4 23 supply voltage 4 Fig.2 Pin configuration. handbook, halfpage TDA8571J MGM563 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 V P1 OUT1 PGND1 OUT1 − OUT2 − PGND2 OUT2 V P2 V DIAG IN1 IN2 SGND IN3 IN4 MODE V P3 OUT3 PGND3 OUT3 − OUT4 − PGND4 OUT4 V P4
2002 Mar 05 5 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J FUNCTIONAL DESCRIPTION The TDA8571J contains four identical amplifiers which can be used for bridge applications. The gain of each amplifier is fixed at 34 dB. Mode select switch (pin MODE) • Standby: low supply current (<100 µ A) • Mute: input signal suppressed • Operating: normal on condition. Since this pin has a low input current (<80 µA), a low cost supply switch can be applied. To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during ≥150 ms (charging of the input capacitors at pins IN1, IN2, IN3 and IN4. When switching from standby to mute, the slope should be at least 18 V/s. This can be realized by: • Microprocessor control • External timing circuit (see Fig.3). Diagnostic output (pin V DIA G ) D YNAMIC DIST ORTION DETECT OR (DDD) At the onset of clipping of one or more output stages, the dynamic distortion detector becomes active and pin V DIAG goes LOW. This information can be used to drive a sound processor or DC volume control to attenuate the input signal and so limit the distortion. The output level of pin V DIAG is independent of the number of channels that are clipping (see Fig.4). S HORT - CIRCUIT DIAGNOSTIC When a short-circuit occurs at one or more outputs to ground or to the supply voltage, the output stages are switched off until the short-circuit is removed and the device is switched on again, with a delay of approximately 10 ms after removal of the short-circuit. During this short-circuit condition, pin V DIAG is continuously LOW. When a short-circuit occurs across the load of one or more channels, the output stages are switched off during approximately 10 ms. After that time it is checked during approximately 50 µs to determine whether the short-circuit is still present. Due to this duty cycle of 50 µs/10 ms the average current consumption during this short-circuit condition is very low. During this short-circuit condition, pin V DIAG is LOW for 10 ms and HIGH for 50 µs (see Fig.5). The protection circuits of all channels are coupled. This means that if a short-circuit condition occurs in one of the channels, all channels are switched off. Consequently, the power dissipation in any short-circuit condition is very low. T EMPERA TURE PRE -WARNING When the virtual junction temperature T vj reaches 145 °C, pin V DIAG goes LOW. O PEN- COLLECT OR OUTPUTS The diagnostic pin has an open-collector output, so more devices can be tied together. An external pull-up resistor is needed. Fig.3 Mode select switch circuitry. handbook, halfpage V P MODE MGD959 BZX79C/3.9V 10 k Ω 47 µF Fig.4 Distortion detector waveform. handbook, halfpage V 9 0 V P V o 0 t MGG155
2002 Mar 05 6 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J Fig.5 Short-circuit waveform. handbook, full pagewidth MGG156 short-circuit over the load 10 ms 50 µs t t V P short circuit current V 9
2002 Mar 05 7 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J LIMITING V ALUES In accordance with the Absolute Maximum Rating System (IEC 60134). THERMAL CHARA CTERISTICS SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT V P supply voltage operating − 18 V non-operating − 30 V load dump protection; during 50 ms; t r ≥ 2.5 ms − 45 V V sc(safe) shor t-circuit saf e voltage − 18 V V rp re verse polarity v oltage − 6V I OSM non-repetitive peak output current − 10 A I ORM repetitive peak output current − 7.5 A P tot total power dissipation − 60 W T stg storage temperature −55 150 °C T amb ambient temperature −40 85 °C T vj vir tual junction temperature − 150 °C SYMBOL P ARAMETER V ALUE UNIT R th j-a thermal resistance from junction to ambient in free air 40 K/W R th j-c thermal resistance from junction to case (see Fig.6) 1 K/W handbook, halfpage 3.2 K/W 0.2 K/W 3.2 K/W 3.2 K/W 3.2 K/W virtual junction OUT1 OUT2 OUT3 OUT4 case MGG157 Fig.6 Equivalent thermal resistance network.
2002 Mar 05 8 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J QU ALITY SPECIFICA TION In accordance with “General Quality Specification For Integrated Circuits (SNW-FQ-611D)” . DC CHARA CTERISTICS V P = 14.4 V ; T amb =2 5 ° C; measured in Fig.7; unless otherwise specified. Notes 1. The circuit is DC adjusted at V P = 6 to 18 V and AC operating at V P = 8.5 to 18 V. 2. At 18 V < V P < 30 V the DC output voltage ≤ 1 ⁄ 2 V P . SYMBOL P ARAMETER CONDITIONS MIN. TYP . MAX. UNIT Supply V P supply voltage note 1 6 14.4 18 V I q(tot) quiescent current R L = ∞− 200 360 mA Operating condition V MODE mode select s witch le vel 8.5 − V p V I MODE mode select s witch current V MODE = 14.4 V − 30 80 µA V O output voltage note 2 − 7.0 − V Mute condition V MODE mode select s witch le vel 3.3 − 6.4 V V O output voltage note 2 − 7.0 − V  V OS  DC output offset voltage MUTE −− 80 mV ∆ V OS  delta DC output offset voltage ON ↔ MUTE −− 80 mV Standby condition V MODE mode select s witch le vel 0 − 2V I stb standby current − 0.2 100 µA Diagnostic V DIAG diagnostic output voltage during any fault condition −−0.6 V T vj temperature pre-warning V DIAG = 0.6 V − 145 −° C
2002 Mar 05 9 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J A C CHARACTERISTICS V P = 14.4 V ; R L =4 Ω ; f = 1 kHz; T amb =2 5 ° C; measured in Fig.7; unless otherwise specified. Notes 1. Dynamic Distortion Detector (DDD) active, pin V DIAG is set to LOW level. 2. Frequency response externally fixed. SYMBOL P ARAMETER CONDITIONS MIN. TYP . MAX. UNIT P o output power THD = 0.5% 16 19 − W THD = 10% 21 26 − W V P = 13.7 V ; THD = 0.5% − 17.5 − W V P = 13.7 V ; THD = 10% − 23 − W P o(EIAJ) EIAJ output power THD = maximum; V i = 2 V (p-p) square wa ve 35 40 − W P o(max) maximum output pow er THD = maximum; V P = 15.2 V ; V i = 2 V (p-p) square wa ve 40 45 − W THD total harmonic distor tion P o =1W − 0.1 − % V MODE = 0.6 V ; note 1 − 10 − % B p power bandwidth THD = 0.5%; P o = −1 dB with respect to 16 W − 20 to 20 000 − Hz f ro(l) low frequency roll-off at −1 dB; note 2 − 25 − Hz f ro(h) high frequency roll-off at − 1d B 2 0 −− kHz G v(cl) closed-loop voltage gain 33 34 35 dB SVRR supply voltage ripple rejection R s =0 Ω ; maximum ripple V ripple = 2 V (p-p) on 40 −− dB mute 50 −− dB standby 80 −− dB  Z i  input impedance 25 30 38 kΩ V n(o) noise output voltage B = 20 Hz to 20 kHz on; R s =0 Ω− 125 170 µV on; R s =1 0k Ω− 150 −µ V mute; independent of R s − 100 −µ V α cs channel separation P o = 16 W; R s =1 0k Ω 45 −− dB ∆ G v  channel unbalance −− 1d B V o output signal in mute maximum input voltage V i = 1 V (RMS) −− 2m V
2002 Mar 05 10 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J TEST AND APPLICA TION INFORMA TION Fig.7 Application circuit diagram. Special care must be taken in the PCB-layout to separate pin V DIAG from the pins IN1, IN2, IN3 and IN4 to minimize the crosstalk between the clip output and the inputs. To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during a period of ≥ 150 ms (charging the input capacitors at pins IN1, IN2, IN3 and IN4). handbook, full pagewidth MGM564 OUT1 R L = 4 Ω OUT1 − − − V ref 2 IN1 input 1 IN2 input 2 4 15 10 MODE 2200 µF 100 nF 23 14.4 V 16 8 1 V P1 V P2 V P3 V P4 V P 30 k Ω OUT2 R L = 4 Ω OUT2 − − − 7 5 11 30 k Ω 21 18 6 3 PGND1 PGND2 PGND3 PGND4 power ground (substrate) OUT3 R L = 4 Ω OUT3 − − − V ref 17 IN3 SGND TDA8571J input 3 IN4 input 4 19 13 12 30 k Ω OUT4 R L = 4 Ω OUT4 − − − 22 20 14 30 k Ω 10 k Ω V DIAG V P DIAGNOSTIC diagnostic output 9 470 nF 470 nF 470 nF 470 nF
2002 Mar 05 11 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J T est information Figures 8 to 13 have the following conditions: V P = 14.4 V; R L =4 Ω ; f = 1 kHz; 80 kHz filter used; unless otherwise specified. Fig.8 I P as a function of V P . handbook, halfpage 0 300 200 100 0 4 V P (V) I P (mA) 20 81 2 1 6 MGM566 Fig.9 P o as a function of V P . (1) EIAJ; 100 Hz. (2) THD N = 10%. (3) THD N = 0.5%. handbook, halfpage 81 8 80 60 0 20 40 10 P o (W) V P (V) 12 14 16 MGM567 (3) (1) (2) Fig.10 THD N as a function of P o . (1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz. handbook, halfpage 10 1 P o (W) 10 − 1 10 − 2 MGM568 10 − 2 10 − 1 11 0 1 0 2 THD N (%) (1) (2) (3) Fig.11 THD N as a function of frequency. (1) P o =1W . (2) P o =1 0W . handbook, halfpage 10 1 f (Hz) 10 − 1 10 − 2 MGM569 10 10 2 10 3 10 4 10 5 THD N (%) (1) (2)
2002 Mar 05 12 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J Fig.12 SVRR as a function of frequency. handbook, halfpage − 80 − 60 − 40 − 20 MGM570 10 f (Hz) SVRR (dB) 10 2 10 3 10 4 10 5 Fig.13 Channel separation as a function of frequency. (1) Between channels 1 and 2 or between channels 3 and 4. (2) Between channels 1 or 2 and channels 3 or 4. handbook, halfpage − 90 − 70 − 50 − 30 MGM565 10 (1) (2) f (Hz) α cs (dB) 10 2 10 3 10 4 10 5
2002 Mar 05 13 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J PCB lay out Fig.14 PCB layout (component side). handbook, full pagewidth MGK079 Pgnd 2200 µF 100 nF 470 nF 10 k Ω diag in 12 3 4 in mode out 4 out 3 sgnd 470 nF out1 out2 V P − − − − − 78.74 111.76 Dimensions in mm.
2002 Mar 05 14 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J Fig.15 PCB layout (soldering side). handbook, full pagewidth MGK080 Pgnd 2200 µF 100nF 470 nF 10 k Ω diag in 1 2 3 4 in mode out 4 out 3 sgnd 470 nF out1 out2 V P − − − − − 78.74 111.76 Dimensions in mm.
2002 Mar 05 15 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J P A CKA GE OUTLINE UNIT A 2 REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 4.6 4.3 A 4 1.15 0.85 A 5 1.65 1.35 DIMENSIONS (mm are the original dimensions) Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. SOT411-1 96-10-11 98-02-20 0 5 10 mm scale D L L 1 L 2 E 2 E c A 4 A 5 A 2 m L 3 E 1 Q w M b p 1 d Z e 2 e e 12 3 j DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm) SOT411-1 v M D x h E h non-concave view B: mounting base side B β e 1 b p cD (1) E (1) Z (1) de D h LL 3 m 0.75 0.60 0.55 0.35 30.4 29.9 28.0 27.5 12 2.54 12.2 11.8 10.15 9.85 1.27 e 2 5.08 2.4 1.6 E h 6 E 1 14.0 13.0 L 1 10.7 9.9 L 2 6.2 5.8 E 2 1.43 0.78 2.1 1.8 1.85 1.65 4.3 3.6 2.8 Q j 0.25 w 0.6 v 0.03 x 45 ° β
2002 Mar 05 16 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J SOLDERING Introduction to soldering thr ough-hole mount packa ges This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. Soldering by dipping or b y solder wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T stg(max) ). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. Suitability of through-hole mount IC pac kages for dipping and wave soldering methods Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. P A CKA GE SOLDERING METHOD DIPPING W A VE DBS, DIP , HDIP , SDIP , SIL suitable suitable (1)
2002 Mar 05 17 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J D A T A SHEET ST A TUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. D A T A SHEET ST A TUS (1) PRODUCT ST A TUS (2) DEFINITIONS Objective data Dev elopment This data sheet contains data from the objectiv e specification f or product de velopment. Philips Semiconductors reserves the right to change the specification in any manner without notice . Preliminar y data Qualification This data sheet contains data from the preliminar y specification. Supplementar y data will be pub lished at a later date. Philips Semiconductors reser v es the r ight to change the specification without notice, in order to impro ve the design and supply the best possib le product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reser v es the r ight to make changes at an y time in order to improv e the design, manufacturing and supply . Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW -SQ-650A. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 Mar 05 18 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J NOTES
2002 Mar 05 19 Philips Semiconductors Product specification 4 × 40 W BTL quad car radio po wer amplifier TD A8571J NOTES
© Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductor s – a world wide compan y Contact information F or additional inf ormation please visit http://www.semiconductor s.philips.com . F ax: 31 40 27 24825 F or sales offices addresses send e-mail to: sales.addresses@www .semiconductors.philips.com . Printed in The Netherlands 753503/02/pp 20 Date of release: 2002 Mar 05 Document order number: 9397 750 09411